![]() Ta and TaN) are required to prevent metal diffusion into semiconducting and insulating areas of the device. It can be seen that, within an IC structure, metals are used as gate and electrode contacts (Tungsten Silicide, light region above the source and drain), contact plugs (Tungsten Plug) and interconnects (Copper 1 through Copper 5). Figure 1 shows a cross-section of a (somewhat older) device depicting a multi-level metallization scheme. In semiconductor device fabrication, contacts are the metal components in direct contact with silicon in transistors and other devices, while interconnects are the current-carrying lines that connect discrete devices within an Integrated Circuit (IC). ![]()
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